Electron Spin Dynamics in Semiconductors without Inversion Symmetry
نویسندگان
چکیده
Recent consideration of spin based quantum computation, optical switches, magnetic memory cells, etc. [1] mandates an improved understanding of spin dynamics and, in particular, the spin relaxation rate [2]. The most promising materials for device purposes, III-V and II-VI compounds, have been shown [3] to have spin relaxation rates dominated by the D’yakonov-Perel’ (DP) mechanism at moderate temperatures and low hole concentrations, and the spin relaxation time is given by the following semiphenomenological expression [4]: 1 τs = q α h̄εg τpT 3 (1)
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